2N4403RLRMG Overview

In this device, the DC current gain is 100 @ 150mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 750mV, which allows maximum flexibilSingle BJT transistory in design.When VCE saturation is 750mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.In the part, the transition frequency is 200MHz.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.

2N4403RLRMG Features

the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz

2N4403RLRMG Applications

There are a lot of ON Semiconductor 2N4403RLRMG applications of single BJT transistors.

• Driver
• Muting
• Inverter
• Interface