2PD602ARL,235 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
2PD602ARL,235 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
250mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
2PD602
Pin Count
3
Number of Elements
1
Configuration
SINGLE
Power - Max
250mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
600mV
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 150mA 10V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 30mA, 300mA
Collector Emitter Breakdown Voltage
50V
Transition Frequency
160MHz
Frequency - Transition
160MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10,000
$0.03900
$0.39
2PD602ARL,235 Product Details
2PD602ARL,235 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 150mA 10V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 30mA, 300mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.In the part, the transition frequency is 160MHz.Collector current can be as low as 500mA volts at its maximum.
2PD602ARL,235 Features
the DC current gain for this device is 120 @ 150mA 10V the vce saturation(Max) is 600mV @ 30mA, 300mA the emitter base voltage is kept at 5V a transition frequency of 160MHz
2PD602ARL,235 Applications
There are a lot of Nexperia USA Inc. 2PD602ARL,235 applications of single BJT transistors.