BCV28H6327XTSA1 Overview
In this device, the DC current gain is 20000 @ 100mA 5V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 100μA, 100mA.The emitter base voltage can be kept at 10V for high efficiency.A transition frequency of 200MHz is present in the part.In extreme cases, the collector current can be as low as 500mA volts.
BCV28H6327XTSA1 Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 200MHz
BCV28H6327XTSA1 Applications
There are a lot of Infineon Technologies BCV28H6327XTSA1 applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
