2N5087G Overview
In this device, the DC current gain is 250 @ 100μA 5V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 300mV, which allows maximum flexibilSingle BJT transistory in design.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 1mA, 10mA.An emitter's base voltage can be kept at 3V to gain high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-50mA).40MHz is present in the transition frequency.A maximum collector current of 50mA volts is possible.
2N5087G Features
the DC current gain for this device is 250 @ 100μA 5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 3V
the current rating of this device is -50mA
a transition frequency of 40MHz
2N5087G Applications
There are a lot of ON Semiconductor 2N5087G applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
