2N2222AUATXV Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 75 @ 1mA 10V.A collector emitter saturation voltage of 1V allows maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 15mA, 150mA.The emitter base voltage can be kept at 6V for high efficiency.There is no device package available from the supplier for this product.Detection of Collector Emitter Breakdown at 50V maximal voltage is present.When collector current reaches its maximum, it can reach 800mA volts.
2N2222AUATXV Features
the DC current gain for this device is 75 @ 1mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 300mV @ 15mA, 150mA
the emitter base voltage is kept at 6V
the supplier device package of 4-CLCC (5.59x3.81)
2N2222AUATXV Applications
There are a lot of TT Electronics/Optek Technology 2N2222AUATXV applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
