2N5088TAR Overview
This device has a DC current gain of 300 @ 100μA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 1mA, 10mA.Keeping the emitter base voltage at 4.5V allows for a high level of efficiency.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.Breakdown input voltage is 30V volts.A maximum collector current of 100mA volts can be achieved.
2N5088TAR Features
the DC current gain for this device is 300 @ 100μA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 100mA
a transition frequency of 50MHz
2N5088TAR Applications
There are a lot of ON Semiconductor 2N5088TAR applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
