2N5089G Overview
In this device, the DC current gain is 400 @ 100μA 5V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of 3V can achieve high levels of efficiency.This device has a current rating of 50mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In this part, there is a transition frequency of 50MHz.The maximum collector current is 50mA volts.
2N5089G Features
the DC current gain for this device is 400 @ 100μA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 3V
the current rating of this device is 50mA
a transition frequency of 50MHz
2N5089G Applications
There are a lot of ON Semiconductor 2N5089G applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
