Welcome to Hotenda.com Online Store!

logo
userjoin
Home

2N5400G

  • 2N5400G
  • 2N5400G

2N5400G

2N5400G

ON Semiconductor

2N5400G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2N5400G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2005
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code 8541.21.00.95
Subcategory Other Transistors
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2N5400
Pin Count 3
JESD-30 Code O-PBCY-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 625mW
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 120V
Current - Collector (Ic) (Max) 600mA
Transition Frequency 100MHz
Frequency - Transition 400MHz
Power Dissipation-Max (Abs) 0.35W
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.04000 $0.04
500 $0.0396 $19.8
1000 $0.0392 $39.2
1500 $0.0388 $58.2
2000 $0.0384 $76.8
2500 $0.038 $95
2N5400G Product Details

2N5400G Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 10mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 5mA, 50mA.A transition frequency of 100MHz is present in the part.Detection of Collector Emitter Breakdown at 120V maximal voltage is present.

2N5400G Features


the DC current gain for this device is 40 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
a transition frequency of 100MHz

2N5400G Applications


There are a lot of ON Semiconductor 2N5400G applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

Related Part Number

FMMT620TA
Diodes Incorporated
FMMT620TA
$0 $/piece
2N6288G
ON Semiconductor
2N6288G
$0 $/piece
FMMT723TA
Diodes Incorporated
FMMT723TA
$0 $/piece
KSC945CYTA
ON Semiconductor
KSC945CYTA
$0 $/piece
MMST3904Q-7-F
Diodes Incorporated
MMST3904Q-7-F
$0 $/piece
FMMT718TC
Diodes Incorporated
FMMT718TC
$0 $/piece
BC857BW-G
Comchip Technology
BC857BW-G
$0 $/piece
2SC2411KT146Q
ROHM Semiconductor
2SC2411KT146Q
$0 $/piece
BCX70H,215
Nexperia USA Inc.
BCX70H,215
$0 $/piece
QSX2TR
ROHM Semiconductor
QSX2TR
$0 $/piece
view all related

Get Subscriber

Enter Your Email Address, Get the Latest News