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KSC945CYTA

KSC945CYTA

KSC945CYTA

ON Semiconductor

KSC945CYTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSC945CYTA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 240mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Published 2002
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Voltage - Rated DC 50V
Max Power Dissipation 250mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 150mA
Frequency 300MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number KSC945
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 250mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 300MHz
Collector Emitter Saturation Voltage 150mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 40
Height 4.58mm
Length 4.58mm
Width 3.86mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
2,000 $0.03888 $0.07776
6,000 $0.03381 $0.20286
10,000 $0.02874 $0.2874
50,000 $0.02536 $1.268
100,000 $0.02254 $2.254
KSC945CYTA Product Details

KSC945CYTA Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 1mA 6V.As it features a collector emitter saturation voltage of 150mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.With the emitter base voltage set at 5V, an efficient operation can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 150mA.300MHz is present in the transition frequency.The breakdown input voltage is 50V volts.A maximum collector current of 150mA volts is possible.

KSC945CYTA Features


the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 150mA
a transition frequency of 300MHz

KSC945CYTA Applications


There are a lot of ON Semiconductor KSC945CYTA applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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