QSX2TR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
QSX2TR Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2013
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
1.25W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
QSX
Pin Count
6
Number of Elements
1
Element Configuration
Single
Power - Max
500mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
200MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
270 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 40mA, 2A
Collector Emitter Breakdown Voltage
30V
Current - Collector (Ic) (Max)
5A
Transition Frequency
200MHz
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
6V
hFE Min
270
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.550133
$1.550133
10
$1.462389
$14.62389
100
$1.379613
$137.9613
500
$1.301521
$650.7605
1000
$1.227850
$1227.85
QSX2TR Product Details
QSX2TR Overview
This device has a DC current gain of 270 @ 500mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 40mA, 2A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.The part has a transition frequency of 200MHz.Maximum collector currents can be below 5A volts.
QSX2TR Features
the DC current gain for this device is 270 @ 500mA 2V the vce saturation(Max) is 250mV @ 40mA, 2A the emitter base voltage is kept at 6V a transition frequency of 200MHz
QSX2TR Applications
There are a lot of ROHM Semiconductor QSX2TR applications of single BJT transistors.