2N5400RLRPG Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 10mA 5V.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 5mA, 50mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.A transition frequency of 100MHz is present in the part.The maximum collector current is 600mA volts.

2N5400RLRPG Features

the DC current gain for this device is 40 @ 10mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 100MHz

2N5400RLRPG Applications

There are a lot of ON Semiconductor 2N5400RLRPG applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting