MMSTA06-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
MMSTA06-7 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Weight
6.010099mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN LEAD
Voltage - Rated DC
80V
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
235
Reach Compliance Code
unknown
Current Rating
500mA
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
MMSTA06
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
250mV
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
80V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
250mV
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
4V
hFE Min
100
Continuous Collector Current
500mA
Height
1mm
Length
2.2mm
Width
1.35mm
REACH SVHC
No SVHC
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
MMSTA06-7 Product Details
MMSTA06-7 Overview
This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is 250mV, giving you a wide variety of design options.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 10mA, 100mA.Single BJT transistor is recommended to keep the continuous collector voltage at 500mA in order to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 4V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.As a result, the part has a transition frequency of 100MHz.Single BJT transistor can be broken down at a voltage of 80V volts.Maximum collector currents can be below 500mA volts.
MMSTA06-7 Features
the DC current gain for this device is 100 @ 100mA 1V a collector emitter saturation voltage of 250mV the vce saturation(Max) is 250mV @ 10mA, 100mA the emitter base voltage is kept at 4V the current rating of this device is 500mA a transition frequency of 100MHz
MMSTA06-7 Applications
There are a lot of Diodes Incorporated MMSTA06-7 applications of single BJT transistors.