Welcome to Hotenda.com Online Store!

logo
userjoin
Home

2N5401RL1G

2N5401RL1G

2N5401RL1G

ON Semiconductor

2N5401RL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2N5401RL1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature EUROPEAN PART NUMBER
HTS Code 8541.21.00.95
Subcategory Other Transistors
Voltage - Rated DC -150V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Current Rating -600mA
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2N5401
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 300MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 150V
Current - Collector (Ic) (Max) 600mA
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 500mV
Collector Base Voltage (VCBO) 160V
Emitter Base Voltage (VEBO) 5V
hFE Min 50
RoHS Status RoHS Compliant
Lead Free Lead Free
2N5401RL1G Product Details

2N5401RL1G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 60 @ 10mA 5V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 5mA, 50mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-600mA).A transition frequency of 100MHz is present in the part.The maximum collector current is 600mA volts.

2N5401RL1G Features


the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 100MHz

2N5401RL1G Applications


There are a lot of ON Semiconductor 2N5401RL1G applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

Related Part Number

2PC1815GR,116
2PC1815GR,116
$0 $/piece
BC338TF
BC338TF
$0 $/piece
TN2219A_D26Z
BD898-S
BD898-S
$0 $/piece
PHE13003C,412
MJD243
MJD243
$0 $/piece
FJP5200RTU
FJP5200RTU
$0 $/piece
2N7052_D74Z
2N7052_D74Z
$0 $/piece
KSD288O
KSD288O
$0 $/piece

Get Subscriber

Enter Your Email Address, Get the Latest News