2N5401RL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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2N5401RL1G Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 4 days ago)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature
EUROPEAN PART NUMBER
HTS Code
8541.21.00.95
Subcategory
Other Transistors
Voltage - Rated DC
-150V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
unknown
Current Rating
-600mA
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
2N5401
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Transistor Application
AMPLIFIER
Gain Bandwidth Product
300MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 10mA 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
150V
Current - Collector (Ic) (Max)
600mA
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
500mV
Collector Base Voltage (VCBO)
160V
Emitter Base Voltage (VEBO)
5V
hFE Min
50
RoHS Status
RoHS Compliant
Lead Free
Lead Free
2N5401RL1G Product Details
2N5401RL1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 60 @ 10mA 5V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 5mA, 50mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-600mA).A transition frequency of 100MHz is present in the part.The maximum collector current is 600mA volts.
2N5401RL1G Features
the DC current gain for this device is 60 @ 10mA 5V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 5mA, 50mA the emitter base voltage is kept at 5V the current rating of this device is -600mA a transition frequency of 100MHz
2N5401RL1G Applications
There are a lot of ON Semiconductor 2N5401RL1G applications of single BJT transistors.