2N5401CTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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2N5401CTA Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Supplier Device Package
TO-92-3
Weight
178.2mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Box (TB)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
-160V
Max Power Dissipation
625mW
Current Rating
-600mA
Frequency
400MHz
Base Part Number
2N5401
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
625mW
Power - Max
625mW
Gain Bandwidth Product
300MHz
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 10mA 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
150V
Voltage - Collector Emitter Breakdown (Max)
150V
Current - Collector (Ic) (Max)
600mA
Frequency - Transition
400MHz
Collector Base Voltage (VCBO)
-160V
Emitter Base Voltage (VEBO)
-5V
hFE Min
60
RoHS Status
RoHS Compliant
Lead Free
Lead Free
2N5401CTA Product Details
2N5401CTA Overview
In this device, the DC current gain is 60 @ 10mA 5V, which is the ratio between the base current and the collector current.When VCE saturation is 500mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-600mA).Supplier device package TO-92-3 comes with the product.Single BJT transistor shows a 150V maximal voltage - Collector EmSingle BJT transistorter Breakdown.Collector current can be as low as 600mA volts at its maximum.
2N5401CTA Features
the DC current gain for this device is 60 @ 10mA 5V the vce saturation(Max) is 500mV @ 5mA, 50mA the emitter base voltage is kept at -5V the current rating of this device is -600mA the supplier device package of TO-92-3
2N5401CTA Applications
There are a lot of ON Semiconductor 2N5401CTA applications of single BJT transistors.