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2SC3324-BL(TE85L,F

2SC3324-BL(TE85L,F

2SC3324-BL(TE85L,F

Toshiba Semiconductor and Storage

2SC3324-BL(TE85L,F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

2SC3324-BL(TE85L,F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature 125°C TJ
Packaging Cut Tape (CT)
Published 2009
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 150mW
Frequency 100MHz
Number of Elements 1
Element Configuration Single
Power Dissipation 150mW
Gain Bandwidth Product 100MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 350 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 120V
Collector Emitter Saturation Voltage 300mV
Max Breakdown Voltage 120V
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 5V
hFE Min 200
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
2SC3324-BL(TE85L,F Product Details

2SC3324-BL(TE85L,F  Features

High voltage: VCEO = 120 V

Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (Typ.)

High hFE: hFE = 200 to 700

Low noise: NF (2) = 0.2dB (Typ.), 3dB (max)

Complementary to 2SA1312

Small package


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