2N5401ZL1G Overview

This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 500mV allows maximum design flexibility.When VCE saturation is 500mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 5V can result in a high level of efficiency.Its current rating is -600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.A maximum collector current of 600mA volts can be achieved.

2N5401ZL1G Features

the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 100MHz

2N5401ZL1G Applications

There are a lot of ON Semiconductor 2N5401ZL1G applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter