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FJAF4210RTU

FJAF4210RTU

FJAF4210RTU

ON Semiconductor

FJAF4210RTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJAF4210RTU Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Number of Pins 3
Weight 6.962g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -140V
Max Power Dissipation 80W
Current Rating -10A
Frequency 30MHz
Number of Elements 1
Element Configuration Single
Power Dissipation 80W
Transistor Application AMPLIFIER
Gain Bandwidth Product 30MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 140V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 3A 4V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 500mA, 5A
Collector Emitter Breakdown Voltage 140V
Transition Frequency 30MHz
Collector Emitter Saturation Voltage -500mV
Collector Base Voltage (VCBO) -200V
Emitter Base Voltage (VEBO) -6V
hFE Min 50
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $19.433171 $19.433171
10 $18.333181 $183.33181
100 $17.295453 $1729.5453
500 $16.316465 $8158.2325
1000 $15.392892 $15392.892
FJAF4210RTU Product Details

FJAF4210RTU Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 3A 4V.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 500mA, 5A.Keeping the emitter base voltage at -6V can result in a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -10A.The part has a transition frequency of 30MHz.During maximum operation, collector current can be as low as 10A volts.

FJAF4210RTU Features


the DC current gain for this device is 50 @ 3A 4V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 500mA, 5A
the emitter base voltage is kept at -6V
the current rating of this device is -10A
a transition frequency of 30MHz

FJAF4210RTU Applications


There are a lot of ON Semiconductor FJAF4210RTU applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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