2N5551CTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 80 @ 10mA 5V.This design offers maximum flexibility with a collector emitter saturation voltage of 200mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 200mV @ 5mA, 50mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.A maximum collector current of 600mA volts can be achieved.
2N5551CTA Features
the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
2N5551CTA Applications
There are a lot of ON Semiconductor 2N5551CTA applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
