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2SD1221-Y(Q)

2SD1221-Y(Q)

2SD1221-Y(Q)

Toshiba Semiconductor and Storage

TRANS NPN 60V 3A PW MOLD

SOT-23

2SD1221-Y(Q) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package PW-MOLD
Operating Temperature 150°C TJ
Packaging Bulk
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 1W
Power - Max 1W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 1V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 5V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 300mA, 3A
Collector Emitter Breakdown Voltage 60V
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 3A
Frequency - Transition 3MHz
RoHS Status RoHS Compliant
Lead Free Lead Free

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