KSE350STU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSE350STU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
7 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Weight
761mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Published
2001
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-300V
Max Power Dissipation
20W
Current Rating
-500mA
Number of Elements
1
Element Configuration
Single
Power Dissipation
20W
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
300V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 50mA 10V
Current - Collector Cutoff (Max)
100μA ICBO
Collector Emitter Breakdown Voltage
60V
Transition Frequency
3MHz
Max Breakdown Voltage
300V
Collector Base Voltage (VCBO)
-300V
Emitter Base Voltage (VEBO)
-5V
hFE Min
30
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.499284
$0.499284
10
$0.471022
$4.71022
100
$0.444361
$44.4361
500
$0.419208
$209.604
1000
$0.395479
$395.479
KSE350STU Product Details
KSE350STU Overview
This device has a DC current gain of 30 @ 50mA 10V, which is the ratio between the collector current and the base current.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.The part has a transition frequency of 3MHz.An input voltage of 300V volts is the breakdown voltage.Collector current can be as low as 500mA volts at its maximum.
KSE350STU Features
the DC current gain for this device is 30 @ 50mA 10V the emitter base voltage is kept at -5V the current rating of this device is -500mA a transition frequency of 3MHz
KSE350STU Applications
There are a lot of ON Semiconductor KSE350STU applications of single BJT transistors.