2N5551RLRA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 80 @ 10mA 5V.With a collector emitter saturation voltage of 250mV, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 200mV @ 5mA, 50mA.Emitter base voltages of 6V can achieve high levels of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 600mA for this device.As you can see, the part has a transition frequency of 100MHz.As a result, it can handle voltages as low as 160V volts.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.
2N5551RLRA Features
the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz
2N5551RLRA Applications
There are a lot of ON Semiconductor 2N5551RLRA applications of single BJT transistors.
- Muting
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- Driver
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- Interface
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- Inverter
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