2N5551RLRPG Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 80 @ 10mA 5V DC current gain.As it features a collector emitter saturation voltage of 250mV, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 200mV @ 5mA, 50mA.Emitter base voltages of 6V can achieve high levels of efficiency.This device has a current rating of 600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In this part, there is a transition frequency of 100MHz.Collector current can be as low as 600mA volts at its maximum.

2N5551RLRPG Features

the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz

2N5551RLRPG Applications

There are a lot of ON Semiconductor 2N5551RLRPG applications of single BJT transistors.

• Inverter
• Interface
• Muting
• Driver