2N5551ZL1G Overview

This device has a DC current gain of 80 @ 10mA 5V, which is the ratio between the collector current and the base current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 200mV @ 5mA, 50mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Its current rating is 600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.100MHz is present in the transition frequency.The maximum collector current is 600mA volts.

2N5551ZL1G Features

the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz

2N5551ZL1G Applications

There are a lot of ON Semiconductor 2N5551ZL1G applications of single BJT transistors.

• Driver
• Muting
• Inverter
• Interface