KST3904MTF Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 10mA 1V.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (200mA).Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.A breakdown input voltage of 30V volts can be used.Collector current can be as low as 200mA volts at its maximum.

KST3904MTF Features

the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 300MHz

KST3904MTF Applications

There are a lot of ON Semiconductor KST3904MTF applications of single BJT transistors.

• Driver
• Inverter
• Muting
• Interface