BC847CWH6433XTMA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BC847CWH6433XTMA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
26 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Additional Feature
LOW NOISE
Max Power Dissipation
250mW
Terminal Position
DUAL
Terminal Form
GULL WING
Base Part Number
BC847
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Configuration
SINGLE
Power - Max
250mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
600mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
420 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
250MHz
Frequency - Transition
250MHz
Collector Base Voltage (VCBO)
50V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10,000
$0.03160
$0.316
BC847CWH6433XTMA1 Product Details
BC847CWH6433XTMA1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 420 @ 2mA 5V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.250MHz is present in the transition frequency.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC847CWH6433XTMA1 Features
the DC current gain for this device is 420 @ 2mA 5V the vce saturation(Max) is 600mV @ 5mA, 100mA a transition frequency of 250MHz
BC847CWH6433XTMA1 Applications
There are a lot of Infineon Technologies BC847CWH6433XTMA1 applications of single BJT transistors.