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2N5639RLRAG

2N5639RLRAG

2N5639RLRAG

ON Semiconductor

2N5639RLRAG datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website

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2N5639RLRAG Datasheet

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Specifications
Name Value
Type Parameter
Lifecycle Status OBSOLETE (Last Updated: 2 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code 8541.21.00.95
Voltage - Rated DC 30V
Max Power Dissipation 310mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Current Rating 10mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number 2N5639
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Operating Mode DEPLETION MODE
Power - Max 310mW
FET Type N-Channel
Transistor Application SWITCHING
Input Capacitance (Ciss) (Max) @ Vds 10pF @ 12V VGS
Gate to Source Voltage (Vgs) 35V
Drain-source On Resistance-Max 60Ohm
Drain to Source Breakdown Voltage 30V
FET Technology JUNCTION
Feedback Cap-Max (Crss) 4 pF
Current - Drain (Idss) @ Vds (Vgs=0) 25mA @ 20V
Resistance - RDS(On) 60Ohm
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.12000 $0.12
500 $0.1188 $59.4
1000 $0.1176 $117.6
1500 $0.1164 $174.6
2000 $0.1152 $230.4
2500 $0.114 $285
2N5639RLRAG Product Details

2N5639RLRAG Description


The 2N5639RLRAG is a JFET Chopper Transistor with N?Channel ? Depletion. A simple form of the field-effect transistor is the junction-gate field-effect transistor (JFET). JFETs are three-terminal semiconductor devices that can be employed as resistors, switches, or amplifier building blocks.

JFETs are purely voltage-controlled and do not require a biasing current, in contrast to bipolar junction transistors. Between the source and drain terminals, a semiconducting channel conducts an electrical charge. The channel is pinched, causing the electric current to be hindered or turned off entirely, by supplying a reverse bias voltage to a gate terminal. When there is no voltage between the source and gate terminals of a JFET, it is typically conducting.



2N5639RLRAG Features


  • Fast Switching Characteristics ? tr = 5.0 ns (Max) (2N5638)

  • Pb?Free Packages are Available*

  • Low Drain?Source “ON” Resistance: RDS(on) = 60 for 2N5639

  • Low Reverse Transfer Capacitance ? Crss = 4.0 pF (Max) @ f = 1.0 MHz



2N5639RLRAG Applications


  • As a switch

  • As an amplifier

  • As a chopper

  • As a buffer

  • As voltage controlled resistors in the operational amplifiers

  • In cascade amplifier and in RF amplifiers


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