NSVJ5908DSG5T1G

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Manufacturer part number:NSVJ5908DSG5T1G

Manufacturer:ON Semiconductor

Description:NSVJ5908DSG5T1G datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NSVJ5908DSG5T1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Factory Lead Time	7 Weeks
Mounting Type	Surface Mount
Package / Case	5-SMD, Flat Leads
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101
Published	2011
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Power - Max	300mW
FET Type	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	10.5pF @ 5V Typ
Current - Drain (Idss) @ Vds (Vgs=0)	10mA @ 5V
Voltage - Cutoff (VGS off) @ Id	300mV @ 100μA
Voltage - Breakdown (V(BR)GSS)	15V
Current Drain (Id) - Max	50mA
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
3,000	$0.35420	$1.0626
6,000	$0.33120	$1.9872
15,000	$0.31970	$4.7955
30,000	$0.30820	$9.246

NSVJ5908DSG5T1G Description

NSVJ5908DSG5T1G transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes NSVJ5908DSG5T1G MOSFET suitable for ISM applications in which reliability and durability are essential. ON Semiconductor NSVJ5908DSG5T1G has the common source configuration.

NSVJ5908DSG5T1G Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

NSVJ5908DSG5T1G Applications

ISM applications

DC large signal applications

Power factor correction

ON Semiconductor

MMBFJ112

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