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2SK3666-3-TB-E

2SK3666-3-TB-E

2SK3666-3-TB-E

ON Semiconductor

2SK3666-3-TB-E datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website

SOT-23

2SK3666-3-TB-E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Max Power Dissipation 200mW
Base Part Number 2SK3666
Pin Count 3
Element Configuration Single
Power Dissipation 200mW
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 4pF @ 10V
Breakdown Voltage 30V
Continuous Drain Current (ID) 10mA
Gate to Source Voltage (Vgs) -30V
Drain to Source Breakdown Voltage 30V
Drain to Source Resistance 200Ohm
Current - Drain (Idss) @ Vds (Vgs=0) 1.2mA @ 10V
Voltage - Cutoff (VGS off) @ Id 180mV @ 1μA
Resistance - RDS(On) 200Ohm
Current Drain (Id) - Max 10mA
Height 1.1mm
Length 2.9mm
Width 1.5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.09614 $0.28842
6,000 $0.08653 $0.51918
15,000 $0.07691 $1.15365
30,000 $0.07211 $2.1633
75,000 $0.06393 $4.79475
150,000 $0.06153 $9.2295
2SK3666-3-TB-E Product Details

2SK3666-3-TB-E  Features

Small IGSS

Small Ciss



2SK3666-3-TB-E  Applications

 Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications




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