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2N5680

2N5680

2N5680

ON Semiconductor

2N5680 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2N5680 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Surface Mount NO
Transistor Element Material SILICON
Packaging Bulk
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Lead (Sn/Pb)
Additional Feature LOW LEAKAGE
Subcategory Other Transistors
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number 2N5680
JESD-30 Code O-MBCY-W3
Qualification Status Not Qualified
Operating Temperature (Max) 200°C
Number of Elements 1
Configuration SINGLE
Power - Max 1W
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 250mA 2V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 120V
Current - Collector (Ic) (Max) 1A
Transition Frequency 30MHz
Power Dissipation-Max (Abs) 1W
VCEsat-Max 1 V
Power Dissipation Ambient-Max 10W
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $21.73290 $2173.29
2N5680 Product Details

2N5680 Description


The 2N5680 from ON Semiconductor is a -120V Silicon PNP Epitaxial Planar High Voltage Transistor designed for use as a driver for high power transistors in general purpose amplifier and switching circuits.



2N5680 Features


  • 96% of customers would recommend to a friend

  • 12 month limited warranty *view Terms & Conditions for details

  • Collector-base voltage(Vcbo = -120V)

  • Emitter-base voltage(Vebo = -4V)

  • Multicomp Pro products are rated 4.6 out of 5 stars



2N5680 Applications


  • Power Management

  • Industrial


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