KSD1616GBU Overview

This device has a DC current gain of 200 @ 100mA 2V, which is the ratio between the collector current and the base current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 50mA, 1A.A transition frequency of 160MHz is present in the part.Detection of Collector Emitter Breakdown at 50V maximal voltage is present.

KSD1616GBU Features

the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 300mV @ 50mA, 1A
a transition frequency of 160MHz

KSD1616GBU Applications

There are a lot of Rochester Electronics, LLC KSD1616GBU applications of single BJT transistors.

• Interface
• Muting
• Inverter
• Driver