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CEN-U57 PBFREE

  • CEN-U57 PBFREE
  • CEN-U57 PBFREE

CEN-U57 PBFREE

CEN-U57 PBFREE

Central Semiconductor Corp

CEN-U57 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

CEN-U57 PBFREE Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Mounting Type Through Hole
Package / Case TO-202 Long Tab
Operating Temperature -65°C~150°C TJ
Packaging Bulk
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 1.75W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 500mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 350mV @ 25mA, 250mA
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 2A
Frequency - Transition 50MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.52000 $3.52
500 $3.4848 $1742.4
1000 $3.4496 $3449.6
1500 $3.4144 $5121.6
2000 $3.3792 $6758.4
2500 $3.344 $8360
CEN-U57 PBFREE Product Details

CEN-U57 PBFREE Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 500mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 350mV @ 25mA, 250mA.Single BJT transistor shows a 100V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

CEN-U57 PBFREE Features


the DC current gain for this device is 20 @ 500mA 1V
the vce saturation(Max) is 350mV @ 25mA, 250mA

CEN-U57 PBFREE Applications


There are a lot of Central Semiconductor Corp CEN-U57 PBFREE applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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