2N6052G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N6052G Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
5 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Contact Plating
Tin
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Surface Mount
NO
Number of Pins
2
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Tray
Published
2000
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-100V
Max Power Dissipation
150W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Peak Reflow Temperature (Cel)
260
Current Rating
-12A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
2N6052
Pin Count
2
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
150W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
12A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 6A 3V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
3V @ 120mA, 12A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
4MHz
Collector Emitter Saturation Voltage
2V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
12A
Height
8.51mm
Length
39.37mm
Width
26.67mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$7.45000
$7.45
10
$6.73200
$67.32
100
$5.57320
$557.32
500
$4.85304
$2426.52
1,000
$4.22684
$4.22684
2N6052G Product Details
2N6052G Overview
In this device, the DC current gain is 750 @ 6A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 2V, which allows for maximum design flexibility.A VCE saturation (Max) of 3V @ 120mA, 12A means Ic has reached its maximum value(saturated).In order to achieve high efficiency, the continuous collector voltage should be kept at 12A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -12A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Parts of this part have transition frequencies of 4MHz.In extreme cases, the collector current can be as low as 12A volts.
2N6052G Features
the DC current gain for this device is 750 @ 6A 3V a collector emitter saturation voltage of 2V the vce saturation(Max) is 3V @ 120mA, 12A the emitter base voltage is kept at 5V the current rating of this device is -12A a transition frequency of 4MHz
2N6052G Applications
There are a lot of ON Semiconductor 2N6052G applications of single BJT transistors.