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2N6052G

2N6052G

2N6052G

ON Semiconductor

2N6052G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2N6052G Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Surface Mount NO
Number of Pins 2
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Tray
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -100V
Max Power Dissipation 150W
Terminal Position BOTTOM
Terminal Form PIN/PEG
Peak Reflow Temperature (Cel) 260
Current Rating -12A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2N6052
Pin Count 2
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 150W
Case Connection COLLECTOR
Transistor Application SWITCHING
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 12A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 6A 3V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 3V @ 120mA, 12A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 4MHz
Collector Emitter Saturation Voltage 2V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 12A
Height 8.51mm
Length 39.37mm
Width 26.67mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $7.45000 $7.45
10 $6.73200 $67.32
100 $5.57320 $557.32
500 $4.85304 $2426.52
1,000 $4.22684 $4.22684
2N6052G Product Details

2N6052G Overview


In this device, the DC current gain is 750 @ 6A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 2V, which allows for maximum design flexibility.A VCE saturation (Max) of 3V @ 120mA, 12A means Ic has reached its maximum value(saturated).In order to achieve high efficiency, the continuous collector voltage should be kept at 12A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -12A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Parts of this part have transition frequencies of 4MHz.In extreme cases, the collector current can be as low as 12A volts.

2N6052G Features


the DC current gain for this device is 750 @ 6A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 120mA, 12A
the emitter base voltage is kept at 5V
the current rating of this device is -12A
a transition frequency of 4MHz

2N6052G Applications


There are a lot of ON Semiconductor 2N6052G applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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