2N6519BU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N6519BU Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
-300V
Max Power Dissipation
625mW
Current Rating
-500mA
Frequency
200MHz
Base Part Number
2N6519
Number of Elements
1
Element Configuration
Single
Power Dissipation
625W
Power - Max
625mW
Gain Bandwidth Product
200MHz
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
300V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 50mA 10V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 5mA, 50mA
Collector Emitter Breakdown Voltage
300V
Collector Base Voltage (VCBO)
300V
Emitter Base Voltage (VEBO)
5V
hFE Min
45
RoHS Status
RoHS Compliant
Lead Free
Lead Free
2N6519BU Product Details
2N6519BU Overview
In this device, the DC current gain is 40 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 5mA, 50mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.During maximum operation, collector current can be as low as 500mA volts.
2N6519BU Features
the DC current gain for this device is 40 @ 50mA 10V the vce saturation(Max) is 1V @ 5mA, 50mA the emitter base voltage is kept at 5V the current rating of this device is -500mA
2N6519BU Applications
There are a lot of ON Semiconductor 2N6519BU applications of single BJT transistors.