2N7002ET1G

new-10%

Manufacturer part number:2N7002ET1G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 60V 260MA SOT-23

Case Package:SOT-23

Datasheet:2N7002ET1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	2.5Ohm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Power Dissipation-Max	300mW Tj
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300mW
Turn On Delay Time	1.7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.5 Ω @ 240mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	26.7pF @ 25V
Current - Continuous Drain (Id) @ 25°C	260mA Ta
Gate Charge (Qg) (Max) @ Vgs	0.81nC @ 5V
Rise Time	1.2ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	1.2 ns
Turn-Off Delay Time	4.8 ns
Continuous Drain Current (ID)	310mA
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.26A
Drain to Source Breakdown Voltage	60V
Nominal Vgs	1 V
Height	940μm
Length	2.9mm
Width	1.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free