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2N7002ET1G

2N7002ET1G

2N7002ET1G

ON Semiconductor

MOSFET N-CH 60V 260MA SOT-23

SOT-23

2N7002ET1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface MountYES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 2.5Ohm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
Number of Elements 1
Power Dissipation-Max 300mW Tj
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation300mW
Turn On Delay Time1.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.5 Ω @ 240mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 26.7pF @ 25V
Current - Continuous Drain (Id) @ 25°C 260mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.81nC @ 5V
Rise Time1.2ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 1.2 ns
Turn-Off Delay Time 4.8 ns
Continuous Drain Current (ID) 310mA
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.26A
Drain to Source Breakdown Voltage 60V
Nominal Vgs 1 V
Height 940μm
Length 2.9mm
Width 1.3mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:34876 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.25000$0.25
500$0.2475$123.75
1000$0.245$245
1500$0.2425$363.75
2000$0.24$480
2500$0.2375$593.75

About 2N7002ET1G

The 2N7002ET1G from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 60V 260MA SOT-23.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the 2N7002ET1G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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