2SA1706T-AN datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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2SA1706T-AN Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
SC-71
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Max Power Dissipation
1W
Pin Count
3
Power - Max
1W
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 1A
Collector Emitter Breakdown Voltage
50V
Frequency - Transition
150MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
hFE Min
100
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.348535
$0.348535
10
$0.328806
$3.28806
100
$0.310195
$31.0195
500
$0.292636
$146.318
1000
$0.276072
$276.072
2SA1706T-AN Product Details
2SA1706T-AN Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 2V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 1A.Emitter base voltages of 6V can achieve high levels of efficiency.A maximum collector current of 2A volts can be achieved.
2SA1706T-AN Features
the DC current gain for this device is 200 @ 100mA 2V the vce saturation(Max) is 700mV @ 50mA, 1A the emitter base voltage is kept at 6V
2SA1706T-AN Applications
There are a lot of ON Semiconductor 2SA1706T-AN applications of single BJT transistors.