2SA1768S-AN datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SA1768S-AN Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
7 Weeks
Lifecycle Status
LIFETIME (Last Updated: 1 week ago)
Contact Plating
Copper, Silver, Tin
Mounting Type
Through Hole
Package / Case
SC-71
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Max Power Dissipation
1W
Pin Count
3
Power - Max
1W
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
700μA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 25mA, 250mA
Collector Emitter Breakdown Voltage
160V
Frequency - Transition
120MHz
Collector Base Voltage (VCBO)
180V
Emitter Base Voltage (VEBO)
6V
RoHS Status
RoHS Compliant
Lead Free
Lead Free
2SA1768S-AN Product Details
2SA1768S-AN Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 5V.When VCE saturation is 500mV @ 25mA, 250mA, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 6V can result in a high level of efficiency.During maximum operation, collector current can be as low as 700μA volts.
2SA1768S-AN Features
the DC current gain for this device is 100 @ 100mA 5V the vce saturation(Max) is 500mV @ 25mA, 250mA the emitter base voltage is kept at 6V
2SA1768S-AN Applications
There are a lot of ON Semiconductor 2SA1768S-AN applications of single BJT transistors.