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2SA1768S-AN

2SA1768S-AN

2SA1768S-AN

ON Semiconductor

2SA1768S-AN datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SA1768S-AN Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 7 Weeks
Lifecycle Status LIFETIME (Last Updated: 1 week ago)
Contact Plating Copper, Silver, Tin
Mounting Type Through Hole
Package / Case SC-71
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Max Power Dissipation 1W
Pin Count 3
Power - Max 1W
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 700μA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 25mA, 250mA
Collector Emitter Breakdown Voltage 160V
Frequency - Transition 120MHz
Collector Base Voltage (VCBO) 180V
Emitter Base Voltage (VEBO) 6V
RoHS Status RoHS Compliant
Lead Free Lead Free
2SA1768S-AN Product Details

2SA1768S-AN Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 5V.When VCE saturation is 500mV @ 25mA, 250mA, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 6V can result in a high level of efficiency.During maximum operation, collector current can be as low as 700μA volts.

2SA1768S-AN Features


the DC current gain for this device is 100 @ 100mA 5V
the vce saturation(Max) is 500mV @ 25mA, 250mA
the emitter base voltage is kept at 6V

2SA1768S-AN Applications


There are a lot of ON Semiconductor 2SA1768S-AN applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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