2SA2126-S-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SA2126-S-TL-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2001
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
800mW
Number of Elements
1
Power Dissipation
800mW
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
520mV
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
520mV @ 100mA, 2A
Collector Emitter Breakdown Voltage
50V
Frequency - Transition
390MHz
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
6V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.267128
$2.267128
10
$2.138800
$21.388
100
$2.017736
$201.7736
500
$1.903524
$951.762
1000
$1.795778
$1795.778
2SA2126-S-TL-E Product Details
2SA2126-S-TL-E Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 2V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 520mV @ 100mA, 2A.Emitter base voltages of 6V can achieve high levels of efficiency.When collector current reaches its maximum, it can reach 3A volts.
2SA2126-S-TL-E Features
the DC current gain for this device is 200 @ 100mA 2V the vce saturation(Max) is 520mV @ 100mA, 2A the emitter base voltage is kept at 6V
2SA2126-S-TL-E Applications
There are a lot of ON Semiconductor 2SA2126-S-TL-E applications of single BJT transistors.