2SB1124S-TD-H Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 140 @ 100mA 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 150MHz.Collector current can be as low as 3A volts at its maximum.
2SB1124S-TD-H Features
the DC current gain for this device is 140 @ 100mA 2V
the vce saturation(Max) is 700mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
2SB1124S-TD-H Applications
There are a lot of ON Semiconductor 2SB1124S-TD-H applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
