2SB1124S-TD-H datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SB1124S-TD-H Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
18 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 day ago)
Mounting Type
Surface Mount
Package / Case
TO-243AA
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
HTS Code
8541.21.00.75
Max Power Dissipation
500mW
Terminal Position
SINGLE
Terminal Form
FLAT
Base Part Number
2SB1124
Pin Count
3
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
500mW
Transistor Application
SWITCHING
Halogen Free
Halogen Free
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 100mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 100mA, 2A
Collector Emitter Breakdown Voltage
50V
Transition Frequency
150MHz
Frequency - Transition
150MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
hFE Min
100
RoHS Status
RoHS Compliant
Lead Free
Lead Free
2SB1124S-TD-H Product Details
2SB1124S-TD-H Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 140 @ 100mA 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 150MHz.Collector current can be as low as 3A volts at its maximum.
2SB1124S-TD-H Features
the DC current gain for this device is 140 @ 100mA 2V the vce saturation(Max) is 700mV @ 100mA, 2A the emitter base voltage is kept at 6V a transition frequency of 150MHz
2SB1124S-TD-H Applications
There are a lot of ON Semiconductor 2SB1124S-TD-H applications of single BJT transistors.