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STBV42D

  • STBV42D
  • STBV42D

STBV42D

STBV42D

STMicroelectronics

STBV42D datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website

SOT-23

STBV42D Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 1W
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STBV42
Pin Count 3
JESD-30 Code O-PBCY-W3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power - Max 1W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 1.5V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 400mA 5V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 250mA, 750mA
Collector Emitter Breakdown Voltage 400V
hFE Min 5
RoHS Status ROHS3 Compliant
Lead Free Lead Free
STBV42D Product Details

STBV42D Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 400mA 5V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 250mA, 750mA.Collector current can be as low as 1A volts at its maximum.

STBV42D Features


the DC current gain for this device is 10 @ 400mA 5V
the vce saturation(Max) is 1.5V @ 250mA, 750mA

STBV42D Applications


There are a lot of STMicroelectronics STBV42D applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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