2SB1215S-E Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 140 @ 500mA 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 150mA, 1.5A.With the emitter base voltage set at -6V, an efficient operation can be achieved.During maximum operation, collector current can be as low as 3A volts.
2SB1215S-E Features
the DC current gain for this device is 140 @ 500mA 5V
the vce saturation(Max) is 500mV @ 150mA, 1.5A
the emitter base voltage is kept at -6V
2SB1215S-E Applications
There are a lot of ON Semiconductor 2SB1215S-E applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
