2SB1215S-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SB1215S-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Bulk
Published
1997
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
1W
Reach Compliance Code
not_compliant
Base Part Number
2SB1215
Pin Count
3
Power - Max
1W
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 500mA 5V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 150mA, 1.5A
Collector Emitter Breakdown Voltage
100V
Frequency - Transition
130MHz
Emitter Base Voltage (VEBO)
-6V
hFE Min
70
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.00000
$1
10
$0.89700
$8.97
100
$0.69910
$69.91
500
$0.57756
$288.78
1,000
$0.45596
$0.45596
2SB1215S-E Product Details
2SB1215S-E Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 140 @ 500mA 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 150mA, 1.5A.With the emitter base voltage set at -6V, an efficient operation can be achieved.During maximum operation, collector current can be as low as 3A volts.
2SB1215S-E Features
the DC current gain for this device is 140 @ 500mA 5V the vce saturation(Max) is 500mV @ 150mA, 1.5A the emitter base voltage is kept at -6V
2SB1215S-E Applications
There are a lot of ON Semiconductor 2SB1215S-E applications of single BJT transistors.