BSS64LT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 10mA 1V DC current gain.This design offers maximum flexibility with a collector emitter saturation voltage of 200mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 15mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).As a result, the part has a transition frequency of 60MHz.A breakdown input voltage of 80V volts can be used.Maximum collector currents can be below 100mA volts.
BSS64LT1G Features
the DC current gain for this device is 20 @ 10mA 1V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 15mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 60MHz
BSS64LT1G Applications
There are a lot of ON Semiconductor BSS64LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
