2SB1215T-TL-E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 500mA 5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 150mA, 1.5A.The emitter base voltage can be kept at -6V for high efficiency.When collector current reaches its maximum, it can reach 3A volts.
2SB1215T-TL-E Features
the DC current gain for this device is 200 @ 500mA 5V
the vce saturation(Max) is 500mV @ 150mA, 1.5A
the emitter base voltage is kept at -6V
2SB1215T-TL-E Applications
There are a lot of ON Semiconductor 2SB1215T-TL-E applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
