2SC6026MFVGR,L3F

new-10%

Manufacturer part number:2SC6026MFVGR,L3F

Manufacturer:Toshiba Semiconductor and Storage

Description:Trans GP BJT NPN 50V 0.15A 3-Pin VESM Embossed T/R

Case Package:SOT-23

Datasheet:2SC6026MFVGR,L3F Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Silver, Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-723
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Published	2014
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Power Dissipation	150mW
Gain Bandwidth Product	60MHz
Transistor Type	NPN
Collector Emitter Voltage (VCEO)	50V
Max Collector Current	150mA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA 6V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage	50V
Collector Emitter Saturation Voltage	150mV
Max Breakdown Voltage	50V
Collector Base Voltage (VCBO)	60V
Emitter Base Voltage (VEBO)	5V
hFE Min	120
Continuous Collector Current	150mA
Height	500μm
Length	1.2mm
Width	800μm
RoHS Status	RoHS Compliant