2SC4731T-AY datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SC4731T-AY Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 No Tab
Number of Pins
3
Packaging
Tape & Reel (TR)
Published
2001
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Subcategory
Other Transistors
Max Power Dissipation
1.5W
Operating Temperature (Max)
150°C
Configuration
Single
Power - Max
1.5W
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400mV
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 500mA 5V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
100V
Frequency - Transition
180MHz
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.81000
$0.81
500
$0.8019
$400.95
1000
$0.7938
$793.8
1500
$0.7857
$1178.55
2000
$0.7776
$1555.2
2500
$0.7695
$1923.75
2SC4731T-AY Product Details
2SC4731T-AY Overview
In this device, the DC current gain is 200 @ 500mA 5V, which is the ratio between the base current and the collector current.When VCE saturation is 400mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).When collector current reaches its maximum, it can reach 4A volts.
2SC4731T-AY Features
the DC current gain for this device is 200 @ 500mA 5V the vce saturation(Max) is 400mV @ 200mA, 2A
2SC4731T-AY Applications
There are a lot of ON Semiconductor 2SC4731T-AY applications of single BJT transistors.