PBSS5350THR

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Manufacturer part number:PBSS5350THR

Manufacturer:Nexperia USA Inc.

Description:PBSS5350THR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

Case Package:SOT-23

Datasheet:PBSS5350THR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Operating Temperature	175°C TJ
Packaging	Tape & Reel (TR)
Published	2017
Series	Automotive, AEC-Q101
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Pin Count	3
Power - Max	1.44W
Transistor Type	PNP
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 3A 2V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	390mV @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	2A
Frequency - Transition	100MHz
RoHS Status	Non-RoHS Compliant

Quantity	Unit Price	Ext. Price
3,000	$0.11316	$0.33948
6,000	$0.10764	$0.64584
15,000	$0.09936	$1.4904
30,000	$0.09384	$2.8152
75,000	$0.09108	$6.831

PBSS5350THR Overview

In this device, the DC current gain is 80 @ 3A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 390mV @ 300mA, 3A.A 50V maximal voltage - Collector Emitter Breakdown is present in the device.