2SB1198KT146R Overview
This device has a DC current gain of 180 @ 100mA 3V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.For high efficiency, the continuous collector voltage must be kept at -500mA.Keeping the emitter base voltage at -5V can result in a high level of efficiency.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As a result, the part has a transition frequency of 180MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.When collector current reaches its maximum, it can reach 500mA volts.
2SB1198KT146R Features
the DC current gain for this device is 180 @ 100mA 3V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 180MHz
2SB1198KT146R Applications
There are a lot of ROHM Semiconductor 2SB1198KT146R applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
