2SC4837S-AY datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SC4837S-AY Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 No Tab
Number of Pins
3
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Subcategory
Other Transistors
Max Power Dissipation
1.5W
Operating Temperature (Max)
150°C
Configuration
Single
Power - Max
1.5W
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 10mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 2A
Collector Emitter Breakdown Voltage
50V
Frequency - Transition
150MHz
RoHS Status
RoHS Compliant
Lead Free
Lead Free
2SC4837S-AY Product Details
2SC4837S-AY Overview
DC current gain in this device equals 140 @ 10mA 2V, which is the ratio of the base current to the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A maximum collector current of 4A volts is possible.
2SC4837S-AY Features
the DC current gain for this device is 140 @ 10mA 2V the vce saturation(Max) is 500mV @ 100mA, 2A
2SC4837S-AY Applications
There are a lot of ON Semiconductor 2SC4837S-AY applications of single BJT transistors.