MJE700 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MJE700 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Transistor Element Material
SILICON
Packaging
Bulk
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
3
Terminal Finish
TIN LEAD
Additional Feature
BUILT IN BIAS RESISTOR
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
240
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Power - Max
40W
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 1.5A 3V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
2.5V @ 30mA, 1.5A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
4A
Transition Frequency
1MHz
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.750696
$1.750696
10
$1.651600
$16.516
100
$1.558113
$155.8113
500
$1.469918
$734.959
1000
$1.386715
$1386.715
MJE700 Product Details
MJE700 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 1.5A 3V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 30mA, 1.5A.Parts of this part have transition frequencies of 1MHz.The device exhibits a collector-emitter breakdown at 60V.
MJE700 Features
the DC current gain for this device is 750 @ 1.5A 3V the vce saturation(Max) is 2.5V @ 30mA, 1.5A a transition frequency of 1MHz
MJE700 Applications
There are a lot of Rochester Electronics, LLC MJE700 applications of single BJT transistors.