2SD1060R-1E Overview
DC current gain in this device equals 100 @ 1A 2V, which is the ratio of the base current to the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 300mA, 3A.Keeping the emitter base voltage at 6V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 5A volts.
2SD1060R-1E Features
the DC current gain for this device is 100 @ 1A 2V
the vce saturation(Max) is 300mV @ 300mA, 3A
the emitter base voltage is kept at 6V
2SD1060R-1E Applications
There are a lot of ON Semiconductor 2SD1060R-1E applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
