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2SD1060R-1E

2SD1060R-1E

2SD1060R-1E

ON Semiconductor

2SD1060R-1E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SD1060R-1E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 29 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 1.75W
Power - Max 1.75W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A 2V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 300mA, 3A
Collector Emitter Breakdown Voltage 50V
Frequency - Transition 30MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.757840 $5.75784
10 $5.431925 $54.31925
100 $5.124457 $512.4457
500 $4.834393 $2417.1965
1000 $4.560749 $4560.749
2SD1060R-1E Product Details

2SD1060R-1E Overview


DC current gain in this device equals 100 @ 1A 2V, which is the ratio of the base current to the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 300mA, 3A.Keeping the emitter base voltage at 6V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 5A volts.

2SD1060R-1E Features


the DC current gain for this device is 100 @ 1A 2V
the vce saturation(Max) is 300mV @ 300mA, 3A
the emitter base voltage is kept at 6V

2SD1060R-1E Applications


There are a lot of ON Semiconductor 2SD1060R-1E applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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