2SD1060R-1E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SD1060R-1E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
29 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Published
2013
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
1.75W
Power - Max
1.75W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1A 2V
Current - Collector Cutoff (Max)
100μA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
50V
Frequency - Transition
30MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.757840
$5.75784
10
$5.431925
$54.31925
100
$5.124457
$512.4457
500
$4.834393
$2417.1965
1000
$4.560749
$4560.749
2SD1060R-1E Product Details
2SD1060R-1E Overview
DC current gain in this device equals 100 @ 1A 2V, which is the ratio of the base current to the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 300mA, 3A.Keeping the emitter base voltage at 6V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 5A volts.
2SD1060R-1E Features
the DC current gain for this device is 100 @ 1A 2V the vce saturation(Max) is 300mV @ 300mA, 3A the emitter base voltage is kept at 6V
2SD1060R-1E Applications
There are a lot of ON Semiconductor 2SD1060R-1E applications of single BJT transistors.