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NSCT3904LT3G

NSCT3904LT3G

NSCT3904LT3G

ON Semiconductor

NSCT3904LT3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NSCT3904LT3G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Supplier Device Package SOT-23-3 (TO-236)
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 40V
Max Power Dissipation 225mW
Power - Max 225mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 40V
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 200mA
Frequency - Transition 300MHz
Collector Base Voltage (VCBO) 60V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
NSCT3904LT3G Product Details

NSCT3904LT3G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 10mA 1V DC current gain.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 5mA, 50mA.Supplier device package SOT-23-3 (TO-236) comes with the product.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.When collector current reaches its maximum, it can reach 200mA volts.

NSCT3904LT3G Features


the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 300mV @ 5mA, 50mA
the supplier device package of SOT-23-3 (TO-236)

NSCT3904LT3G Applications


There are a lot of ON Semiconductor NSCT3904LT3G applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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